The newly developed material is compatible with silicon fabrication techniques and could pave the way for integration into commercial computing hardware for deep-learning applications.
“With that key insight, and the very powerful nanofabrication techniques we have at MIT.nano, we have been able to put these pieces together and demonstrate that these devices are intrinsically very fast and operate with reasonable voltages,” said senior author Jesús A. del Alamo, the Donner Professor in MIT’s Department of Electrical Engineering and Computer Science (EECS). “This work has really put these devices at a point where they now look really promising for future applications.”
The researchers further explained how they managed to increase the speed of the ions in the device.
“The working mechanism of the device is electrochemical insertion of the smallest ion, the proton, into an insulating oxide to modulate its electronic conductivity. Because we are working with very thin devices, we could accelerate the motion of this ion by using a strong electric field, and push these ionic devices to the nanosecond operation regime,” explained senior author Bilge Yildiz, the Breene M. Kerr Professor in the departments of Nuclear Science and Engineering and Materials Science and Engineering.